ITC 2024
Program at a Glance
  >   Program   >   Program at a Glance
Program at a Glance
  • Keynote: 35 minutes / Invited: 25 minutes / Oral: 20 minutes
    (Topic 1) 1. Semiconductor materials and processing for high performance TFTs We3A, Th1A, Fr2A
    (Topic 2) 2. Understanding and addressing instabilities of TFTs We1B, We2B
    (Topic 3) 3. TFT based functional devices (e.g., sensors, memories, synapse) We1A, We2A, Th2A, Fr1A
    (Topic 4) 4. Scaling of TFTs for high resolution integration Th2B
    (Topic 5) 5. TFT compact models for circuit simulation Fr2B
    (Topic 7) 7. Flexible and stretchable TFT devices and circuits Th1B, Fr1B
    (Topic 8) 8. Circuit design and implementations of TFTs We3B
    Time March 27 (Wed.)
    09:00-19:00 Registration
    09:30-11:00 90' Room A
    (Fusion Hall, 1F)
    Room B
    (Matrix Hall, 2F)
    [We1A] Synaptic Transistors-1
    *Session Chair : Prof. Sungjune Jung (POSTECH, Korea)
    [We1B] Oxide TFTs
    *Session Chair : Prof. Andrew Flewitt (Univ. of Cambridge, UK)
    Prof. Junghwan Kim (UNIST, Korea)
    Invited
    [We1A-1] Synaptic Transistors and Their Applications
    Prof. Wentao Xu (Nankai Univ., China)
    Invited
    [We1B-1] Oxide-TFT Technology for Next-Generation Sustainable Electronics
    Prof. Kenji Nomura (UCSD, USA)
    Invited
    [We1A-2] Ferroelectric Thin-Film Transistors for Memory and Neuromorphic Device Applications
    Prof. Jang-Sik Lee (POSTECH, Korea)
    Invited
    [We1B-2] Transport Analysis of Amorphous Oxide Semiconductor and Related Materials
    Prof. Keisuke Ide (Tokyo Inst. of Tech., Japan)
    Invited
    [We1A-3] Heterogeneous Integration of Functional Devices for Artificial Intelligence of Things
    Prof. Kyusang Lee (Univ. of Virginia, USA)
    [We1B-3] Highly Stable In-Ga-ZnO Thin-Film Transistors Realized by Oxygen Plasma Treatment of the Dielectric-Channel Interface
    Mr. Shaocong LV (Shandong Univ., China)
    [We1A-4] Heterogeneous Channels based Ferroelectric FET Synapse for Compact Hardware Accelerator
    Mr. Hongrae Joh (KAIST, Korea)
    [We1B-4] Thickness-Dependent Bias Stability of IGZO TFT
    Mr. Weilin Wang (Shandong Univ., China)
    11:00-11:15 15' Break
    11:15-12:45 90' Room A
    (Fusion Hall, 1F)
    Room B
    (Matrix Hall, 2F)
    [We2A] Synaptic Transistors-2
    *Session Chair : Prof. Kyusang Lee (Univ. of Virginia, USA)
    Prof. You Seung Rim (Sejong Univ., Korea)
    [We2B] Instability Mechanism
    *Session Chair : Prof. Kenji Nomura (UCSD, USA)
    Prof. Jae Kyeong Jeong (Hanyang Univ., Korea)
    Invited
    [We2A-1] Organic Neuromorphic Transistors for Intelligent Display
    Prof. Huipeng Chen (Fuzhou Univ., China)
    Invited
    [We2B-1] Phenomenological Understanding of Asymmetric Stat Drop in Oxide Semiconductor-based Devices
    Dr. Hyeon-Jun Lee (DGIST, Korea)
    Invited
    [We2A-2] 2D Organic Crystals: From Fabrications to Neuromorphic Computing
    Prof. Yun Li (Nanjing Univ., China)
    Invited
    [We2B-2] Revisiting the Origin of Band Tails in Amorphous Semiconductors
    Prof. Andrew Flewitt (Univ. of Cambridge, UK)
    [We2A-3] Oxide Semiconductor-based Neuromorphic In-Sensor Circuit for Harmful Ultraviolet Protective Systems
    Mr. Jong Min Lee (Chung-Ang Univ., Korea)
    [We2B-3] Investigating Apparent Negative Differential Resistance in the Output Characteristics of Source-Gated Thin-Film Transistors
    Dr. Eva Bestelink (Univ. of Surrey, UK)
    [We2A-4] A Flexible and Fully Degradable Biomimetic Neuromorphic Device for Future Environmentally Friendly Electronics
    Mr. Mohammad Tauquir Alam Shamim Shaikh (Sejong Univ., Korea)
    [We2B-4] Improvement of the Bias Instability Characteristics Driven by Organic Film in IGZO TFT for Multi-TFTs Structure
    Dr. Youn-Gyoung Chang (LG Display Co., Ltd., Korea)
    12:45-14:15 90' Lunch Time
    14:15-14:25 10' Opening Ceremony
    (Fusion Hall, 1F)
    14:25-15:35 70 Keynote Lecture 1
    "Oxide Semiconductor Gain Cell Memory"

    Prof. H.-S. Philip Wong (Stanford Univ., USA)
    *Session Chair : Yong-Young Noh (POSTECH, Korea)
    Keynote Lecture 2
    "Atomatically Thin Oxide Semiconductor Transistors for BEOL Logic, Memory, and RF Applications"

    Prof. Peide Ye (Purdue Univ., USA)
    *Session Chair : Yong-Young Noh (POSTECH, Korea)
    15:35-15:50 15' Break
    15:50-17:20 90' Room A
    (Fusion Hall, 1F)
    Room B
    (Matrix Hall, 2F)
    [We3A] Organic/Perovskite Semiconductor
    *Session Chair : Prof. Mamoru Furuta (Kochi Univ. of Tech., Japan)
    [We3B] Circuit Design and Implementation of TFTs
    *Session Chair : Prof. Kee Chan Park (Konkuk Univ., Korea)
    Prof. Do Hwan Kim (Hanyang Univ., Korea)
    Invited
    [We3A-1] Towards Printed Organic Field-Effect Transistors Operating at Ultra-High Frequencies
    Dr. Mario Caironi (Istituo Italiano di Tecnologia, Italy)
    Invited
    [We3B-1] New Fontier of Organic Electronics with Multi-functional Logic Circuit
    Dr. Yutaka Wakayama (Nat’l Inst. for Materials Science, Japan)
    Invited
    [We3A-2] Two-Dimensional Sn-Based Perovskite Transistors and Their Memory and Synaptic Behaviors
    Prof. Chu-Chen Chueh (Nat'l Taiwan Univ., Taiwan)
    Invited
    [We3B-2] Enhancing Performance of Oxide-TFT Integrated Circuit: Unveiling the Potentials of Double-Gate Oxide TFTs
    Prof. Byong-Deok Choi (Hanyang Univ., Korea)
    Invited
    [We3A-3] Epitaxial Lift-off Technology Towards Flexible and Vertically Stacked Semiconductor Devices
    Prof. Hyun S. Kum (Yonsei Univ., Korea)
    [We3B-3] Ultraviolet Phototransistors for Active-Matrix Sensor Arrays
    Mr. Yannick Schellander (Univ. of Stuttgart, Germany)
    [We3A-4] Contact Resistance in Nanoscale Organic Thin-Film Transistors
    Ms. Karla Vanessa Cordero Solano
    (Max Planck Institute for Solid State Research, Germany)
    [We3B-4] IGZO Thin-Film Transistors on a Dissolvable and Flexible Triacetyl Cellulose Film
    Dr. Dianne Corsino (Free Univ. of Bozen-Bolzano, Italy)
    17:20-17:35 15' Break
    17:35-19:35 120' Welcome Reception
    (Lobby, 1F)
    Time March 28 (Thu.)
    09:00-18:00 Registration
    09:30-10:40 90' Keynote Lecture 3
    "Recent Progresses in Thin-Film Transistor Technology for AMOLED Displays"

    VP Keunho Jang (Samsung Display Co., Ltd., Korea)
    *Session Chair : Dr. Chi-Sun Hwang (ETRI, Korea)
    Keynote Lecture 4
    "A New Era of Oxide TFTs for Future Display Applications"

    Dr. Jiyong Noh (LG Display Co., Ltd., Korea)
    *Session Chair : Dr. Chi-Sun Hwang (ETRI, Korea)
    10:40-11:00 20' Break
    11:00-12:30 90' Room A
    (Fusion Hall, 1F)
    Room B
    (Matrix Hall, 2F)
    [Th1A] 2D Semiconductor
    *Session Chair : Dr. Mario Caironi (Istituo Italiano di Tecnologia, Italy)
    Prof. Jin-Seong Park (Hanyang Univ., Korea)
    [Th1B] Materials
    *Session Chair : Prof. Myung-Gil Kim (Sungkyunkwan Univ., Korea)
    Invited
    [Th1A-1] Noninvasive Atomic-Layer Etching of van der Waals Semiconductors for High-Performance Electronics
    Prof. Songlin Li (Nanjing Univ., China)
    Invited
    [Th1B-1] High-performance n-Type Polymers for Organic Transistors
    Prof. Xugang Guo (Southern Univ. of Science and Tech., China)
    Invited
    [Th1A-2] Ferroelectric Transistors based on van der Waals Layered Materials
    Prof. Fucai Liu (Univ.of Electronic Science and Tech. of China, China)
    Invited
    [Th1B-2] Ultrathin Organic Transistors for Next-generation Skin Electronics
    Dr. Sunghoon Lee (RIKEN, Japan)
    [Th1A-3] Fermi Level Depinning of WSe2 Transistor via Metal-Interlayer-Semiconductor Contact Using iCVD-based Polymer Thin Film
    Mr. Hyeongjin Lim (KAIST, Korea)
    Invited
    [Th1B-3] Charged Impurity-free Diffusion Doping in Large-area Monolayer MoS2
    Dr. Seungjun Chung (KIST, Korea)
    [Th1A-4] Room Temperature-Grown Highly Oriented p-Type Nanocrystalline Tellurium Thin-Films Transistors for Large-Scale CMOS Circuits
    Mr. Jiyong Lee (Sungkyunkwan Univ., Korea)
    Invited
    [Th1B-4] Metal Oxide Thin Film Transistors for Low-Power Electronics
    Prof. Wei Huang (Univ. of Electronic Science and Tech. of China, China)
    12:30-14:00 90' Lunch Time
    14:00-15:30 90' Room A
    (Fusion Hall, 1F)
    Room B
    (Matrix Hall, 2F)
    [Th2A] Memory
    *Session Chair : Prof. Bowen Zhu (Westlake Univ., China)
    [Th2B] Scaling of TFTs for High Resolution Integration
    *Session Chair : Dr. Sung Haeng Cho (ETRI, Korea)
    Invited
    [Th2A-1] Oxide Semiconductors for Capacitorless BEOL-compatible DRAM Cell with Hours-long Retention Time and Excellent Scalability
    Dr. Attilio Belmonte (IMEC, Belgium)
    Invited
    [Th2B-1] Non-planar Oxide TFTs for Ultra-high-resolution Display
    Dr. Chi-Sun Hwang (ETRI, Korea)
    Invited
    [Th2A-2] Interface Band Engineering for High-Performance 2D Semiconductor Electronics
    Prof. Chul-Ho Lee (Seoul Nat'l Univ., Korea)
    Invited
    [Th2B-2] 2D Transition Metal Chalcogenide Transistors: Charge Injection and Transport Mechanism
    Prof. Wenwu Li (Fudan Univ., China)
    [Th2A-3] High Frequency Shift Registers Using Depletion Type IGZO TFTs
    Mr. Florian Kleber (Univ. of Stuttgart, Germany)
    Invited
    [Th2B-3] Advanced Laser Annealing of Si and Oxide Thin Films for Future Active-Matrix Displays
    Prof. James Im (Columbia Univ., USA)
    [Th2A-4] Impacts of Double Gate Operation on Ferroelectric Thin-Film Transistors
    Ms. Yen-Chen Chen (Nat’l Sun Yat-sen Univ., Taiwan)
    [Th2B-4] Improvement of Drain-Induced-Barrier-Lowering in IZTO Thin Film Transistors by Single Spinel Phase Crystallization
    Mr. Gwang-Bok Kim (Hanyang Univ., Korea)
    15:30-15:45 15' Break
    15:45-17:45 120' Poster Session
    (Lobby, 1F)
    18:00-20:00 120' Banquet
    (Conference Room (1F) / Auditorium (Building No.: E15), KAIST)
    Time March 29 (Fri.)
    08:30-13:00 Registration
    9:00-10:30 90' Room A
    (Fusion Hall, 1F)
    Room B
    (Matrix Hall, 2F)
    [Fr1A] Sensor
    *Session Chair : Prof. Sang-Hee Ko Park (KAIST, Korea)
    [Fr1B] Architecture
    *Session Chair : Prof. Hyun Suk Kim (Dongguk Univ., Korea)
    Invited
    [Fr1A-1] Organic Thin-film Transistors for Adaptive Applications
    Prof. Fengjiao Zhang (Univ. of Chinese Academy of Sciences, China)
    Invited
    [Fr1B-1] Inkjet-Printed High-Performance CNT TFTs for Flexible and Transparent Electronics Applications
    Prof. Yongtaek Hong (Seoul Nat'l Univ., Korea)
    Invited
    [Fr1A-2] Optical Light Trapping Structures: A Gateway to Advanced Thin Film Phototransistor Efficiency
    Prof. Chee Leong Tan (Nanjing Univ. of Posts and Telecommunications, China)
    Invited
    [Fr1B-2] Materials and Processes for Stretchable Transistor Architectures
    Prof. Antonio Facchetti (Georgia Institute of Tech., USA)
    Invited
    [Fr1A-3] Wearable, Implantable, Tissue-Integrated Organic Printed Transistors and Sensor Arrays
    Prof. Sungjune Jung (POSTECH, Korea)
    Invited
    [Fr1B-3] TFTs Meet Novel Capabilities: Multi-valued Logic and Information Security
    Prof. Hocheon Yoo (Gachon Univ., Korea)
    Invited
    [Fr1A-4] Solution-Processed Oxide Semiconductor Thin-Film Transistors for Flexible Sensor Arrays
    Prof. Bowen Zhu (Westlake Univ., China)
    [Fr1B-4] Stretchable Metal Oxide Thin-Film Transistor Circuits on Engineered Molecular-Tailored Elastic Substrate
    Mr. Seung-Han Kang (Chung-Ang Univ. Korea)
    10:30-10:55 25' Break
    10:55-12:25 90' Room A
    (Fusion Hall, 1F)
    Room B
    (Matrix Hall, 2F)
    [Fr2A] Oxide Semiconductor
    *Session Chair: Dr. Sung Haeng Cho (ETRI, Korea)
    [Fr2B] TFT Compact Models for Circuit Simulation
    *Session Chair : Dr. Chi-Sun Hwang (ETRI, Korea)
    Invited
    [Fr2A-1] High-mobility Polycrystalline Indium Oxide (InOx:H) Thin-film Transistor
    Prof. Mamoru Furuta (Kochi Univ. of Tech., Japan)
    Invited
    [Fr2B-1] TFT Compact Models and Dynamic Simulation Approach for Display Technology
    Mr. Won Seok Lee (Silvaco Korea, Korea)
    Invited
    [Fr2A-2] Recent Progress on Atomic Layer Deposited Oxide Semiconductor for New Channel Materials: Fundamental Values and Challenges
    Prof. Jin-Seong Park (Hanyang Univ., Korea)
    [Fr2B-2] Modeling of Anomalous Dimension-Dependent Effect in IGZO TFTs caused by Random Potential Distribution
    Ms. Su Hyun Kim (Hanyang Univ., Korea)
    [Fr2A-3] Atomic Layer Deposited p-Type SnO Thin Film Transistors: Controlling Surface Morphology and Device Characteristics
    Dr. Kham Niang (Univ. of Cambridge, UK)
    [Fr2B-3] Developments in Physical Compact Modeling for Source-Gated Transistors
    Mr. Patryk Golec (Univ. of Surrey, UK)
    [Fr2A-4] Development of New Metal Oxide TFT with High Mobility and Reliability
    Mr. Guowen Yan (Hefei Visionox Tech. Co., Ltd., China)
    [Fr2B-4] A Comprehensive Compact Model for Carbon Nanotube Thin-Film Transistors
    Ms. Yujia Gong (Peking Univ., China)
    12:25-12:40 15' Break
    12:40-13:10 30' Awards & Closing Ceremony
    (Fusion Hall, 1F)

    ※ Please note that programs are subject to change.